| PART |
Description |
Maker |
| M5M5V208RV-12L M5M5V208RV-12LL M5M5V208VP-85L M5M5 |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8 |
From old datasheet system
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| GM72V66841CLT GM72V66841CT GM72V66841CT_CLT GM72V6 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
2097152 word x 8 bit x 4 bank synchronous dynamic RAM
|
etc
LG Semicon Co.,Ltd.
LG Semiconductor
|
| MR27V1652D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| HM51W17805B HM51W17805BJ-8 HM51W17805BLJ-8 HM51W17 |
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-3355-0 71; Contact Mating Area Plating: Tin
2097152-word*8-bit Dynamic random access memory
|
Hitachi,Ltd.
|
| MR27V6452DMA MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
